Inorganic Semiconductors in Electronic Applications
Author:
Affiliation:
1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
2. Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland
Abstract
Funder
National Science Centre, Poland
Publisher
MDPI AG
Subject
Automotive Engineering
Link
https://www.mdpi.com/2673-3978/4/3/11/pdf
Reference5 articles.
1. p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions;Tilemachou;Electron. Mater.,2022
2. Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector;Vashishtha;Electron. Mater.,2022
3. Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane;Kaloyeros;Electron. Mater.,2022
4. Majority and Minority Charge Carrier Traps in n-Type 4H-SiC Studied by Junction Spectroscopy Techniques;Capan;Electron. Mater.,2022
5. Passive Intermodulation at Contacts of Rough Conductors;Dayan;Electron. Mater.,2022
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