Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices-Reference-Cited by-同舟云学术

Study of the Within-Batch TID Response Variability on Silicon-Based VDMOS Devices

Published:2023-03-15 Issue:6 Volume:12 Page:1403
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Li Xiao¹²³,Cui Jiangwei¹²³,Zheng Qiwen¹²³,Li Pengwei⁴,Cui Xu¹²³,Li Yudong¹²³,Guo Qi¹²³

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

4. China Academy of Space Technology, Beijing 100049, China

Abstract

Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID response variability on silicon-based VDMOS devices is studied by the 60Co gamma-ray irradiation experiment in this paper. The variations in device parameters after irradiation is obtained, and the damage mechanism is revealed. Experimental results show that the standard deviations of threshold voltage, subthreshold swing, output capacitance, and diode forward voltage increase, while the standard deviation of maximum transconductance decreases after irradiation. The standard deviation of on-state resistance is basically unchanged before and after irradiation. By separating the trapped charges generated by TID irradiation, it is found that the deviation of the oxide trapped charges and the interface traps increase with the increase in the total dose. The reasons for the variation in device parameters after irradiation are revealed by establishing the relationship between the trapped charges and the electrical parameters before and after irradiation.

Funder

Youth Innovation Promotion Association CAS

West Light Foundation of the Chinese Academy of Science

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/6/1403/pdf

Reference35 articles.

1. Grant, D.A., and Gowar, J. (1989). Power MOSFETS: Theory and Applications, John Wiley & Sons, Incorporated. [1st ed.].

2. Radiation-Induced Interface Traps in Power Mosfets;Singh;IEEE Trans. Nucl. Sci.,1986

3. Wang, H. (2017). Research on the Radiation Effects of VDMOS Power Devices in Space Instruments. [Master’s Thesis, National University of Defense Technology].

4. Impact of within-wafer process variability on radiation response;Hu;Microelectron. J.,2011

5. Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs;Gerardin;IEEE Trans. Nucl. Sci.,2015

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

2. Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs;Electronics;2023-10-13