Thin Film Semiconductor Metal Oxide Oxygen Sensors: Limitations, Challenges, and Future Progress

Author:

Bulowski Wojciech12,Knura Rafał1,Socha Robert P.1ORCID,Basiura Maciej1ORCID,Skibińska Katarzyna1ORCID,Wojnicki Marek12ORCID

Affiliation:

1. CBRTP SA Research and Development Center of Technology for Industry, Ludwika Waryńskiego 3A, 00-645 Warszawa, Poland

2. Faculty of Non-Ferrous Metals, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Kraków, Poland

Abstract

Among oxygen sensors, types such as polymer-, ceramic-, or carbon-based ones may be distinguished. Particular interest in semiconductor metal oxide (SMO) sensors has recently been observed. This is due to their easy fabrication process, high control over the final product (dopants, posttreatment, etc.), and high concentration of oxygen vacancies, by which they show significant changes in electrical properties when exposed to analyte. In this review, different types of sensors are described and categorized. Importantly, their limitations, challenges and principles of sensing mechanism are also discussed, wherein attention is primarily paid to semiconductor metal oxide (SMO) oxygen sensors. This comprehensive review provides an in-depth analysis of the existing literature on planar SMO oxygen sensors, focusing on various materials, fabrication techniques, and sensing mechanisms. It also critically assesses the challenges and limitations in current research, offering insights into future directions for developing highly efficient and reliable sensors. Currently, most oxygen resistive sensors are a few micrometers thick and operate at high temperatures, which leads to high power consumption. To highlight importance of this topic, a market overview is also presented.

Funder

National Center for Research and Development

Publisher

MDPI AG

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