Characteristics of Surface Charge Accumulation on Spacers and Its Influencing Factors

Abstract

Charge accumulation usually happens on the surface of spacers under DC operation, which is susceptible to inducing surface flashover. In order to explore the surface charge accumulation mechanisms and the influences of dielectric conductivity, gas ion mobility, and temperature field on the surface charges, a time-varying charge density model at the gas–solid interface of spacers was established. The results of the simulation show that the discontinuity of the current density between the spacer bulk side and the gas ion flow is the fundamental reason for the charge accumulation on the spacer surface. Additionally, the value of current density fluxes at the interface continues to decrease with the change of the electric field, and the progress of charge transfer gradually stabilizes. Moreover, the dielectric conductivity directly affects the charge accumulation process, and there is a critical conductivity in which the effect of charge conduction in dielectrics counteracts that of gas-phase charge deposition, theoretically. When the conductivity is higher than the critical conductivity, the solid-side charge conduction is the main source of the surface charge accumulation, while the gas-phase charge deposition on the gas side plays a dominant role when the conductivity is lower than the critical conductivity. The charge accumulation is not significantly affected by gas ion mobility when the temperature is evenly distributed. However, under the temperature field with gradient distribution, the current density fluxes at the interface change, causing the polarity reverse of the accumulated charge. In the high-temperature region, the volume current density surges simultaneously with the conductivity, leading to a higher density of surface charge accumulation. Lastly, the design of spacers needs to keep the current densities on both sides of the interface as similar as possible in order to avoid excessive charge gathering in localized areas.