Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide
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Published:2021-08-06
Issue:16
Volume:10
Page:1884
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ISSN:2079-9292
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Container-title:Electronics
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language:en
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Short-container-title:Electronics
Author:
Min Sun-HongORCID,
Kim Jung-Il,
Sattorov MatlabjonORCID,
Kim Seontae,
Hong Dongpyo,
Kim Seonmyeong,
Hong Bong-Hwan,
Park ChawonORCID,
Ma Sukhwal,
Kim Minho,
Lee Kyo-Chul,
Lee Yong-Jin,
Kwon Han-Byul,
Yoo Young-Joon,
Park Sang-Yoon,
Park Gun-SikORCID
Abstract
The failure threshold time of semiconductors caused by the impact of irradiated high-power electromagnetic waves (HPEM) is experimentally studied. A SN7442 integrated circuit (IC) is placed in an emulator with a WR430 closed waveguide and is irradiated by HPEM generated from a magnetron oscillator. The state of the SN7442 component is observed by a light-emitting diode (LED) detector and the voltage measured in the SN7442 component. As the magnitude of the electric field in the HPEM is varied from 24 kV/m to 36 kV/m, the failure threshold time falls from 195 s to 17 s with dependence of the irradiated electric field (E) on the failure threshold time (T) from T~E−12 to a T~E−6.
Funder
National Research Foundation of Korea
Korea Institute of Radiological and Medical Sciences
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
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