Abstract
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.
Funder
Sichuan Science and Technology Program
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
14 articles.
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