Gas-Sensitive Properties of β-Ga2O3 Thin Films Deposited and Annealed at High Temperature-Reference-Cited by-同舟云学术

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Gas-Sensitive Properties of β-Ga2O3 Thin Films Deposited and Annealed at High Temperature

Published:2023-11-15 Issue: Volume: Page:
ISSN:
Container-title:ECSA 2023
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Author:

Yakovlev Nikita¹^ORCID,Almaev Aleksei¹^ORCID,Korchemagin Alexander¹,Kumar Mukesh²,Kaur Damanpreet²^ORCID

Affiliation:

1. Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, 634050 Tomsk, Russia

2. Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar 140001, India

Publisher

MDPI

Link

https://www.mdpi.com/2673-4591/58/1/2/pdf

Reference10 articles.

1. Stability of semiconducting gallium oxide thin films;Fleischer;Thin Solid Films.,1990

2. H2-Induced changes in electrical conductance of β-Ga2O3 thin-film systems;Fleischer;Appl. Phys.,1992

3. β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies;Afzal;J. Mater.,2019

4. High temperature Ga2O3-gas sensors and SnO2-gas sensors: A comparison;Hoefer;Sens. Actuators B Chem.,2001

5. Lambda measurement with Ga2O3;Lampe;Sens. Actuators B Chem.,1994

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