Gas-Sensitive Properties of β-Ga2O3 Thin Films Deposited and Annealed at High Temperature

Author:

Yakovlev Nikita1ORCID,Almaev Aleksei1ORCID,Korchemagin Alexander1,Kumar Mukesh2,Kaur Damanpreet2ORCID

Affiliation:

1. Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, 634050 Tomsk, Russia

2. Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar 140001, India

Publisher

MDPI

Reference10 articles.

1. Stability of semiconducting gallium oxide thin films;Fleischer;Thin Solid Films.,1990

2. H2-Induced changes in electrical conductance of β-Ga2O3 thin-film systems;Fleischer;Appl. Phys.,1992

3. β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies;Afzal;J. Mater.,2019

4. High temperature Ga2O3-gas sensors and SnO2-gas sensors: A comparison;Hoefer;Sens. Actuators B Chem.,2001

5. Lambda measurement with Ga2O3;Lampe;Sens. Actuators B Chem.,1994

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3