Shockproof Deformable Infrared Radiation Sensors Based on a Polymeric Rubber and Organic Semiconductor H2Pc-CNT Composite

Author:

Chani Muhammad Tariq Saeed1ORCID,Karimov Khasan S.23,Kamal Tahseen1,Fatima Noshin4ORCID,Rahman Mohammed M.1ORCID,Asiri Abdullah M.1ORCID

Affiliation:

1. Center of Excellence for Advanced Materials Research, King Abdulaziz University, Jeddah 21589, Saudi Arabia

2. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi 23640, Pakistan

3. Center for Innovative Development of Science and Technologies of Academy of Sciences, Rudaki Ave., 33, Dushanbe 734025, Tajikistan

4. Faculty of Engineering, Technology and Built Environment, UCSI University, Kuala Lumpur 56000, Malaysia

Abstract

Polymeric rubber and organic semiconductor H2Pc-CNT-composite-based surface- and sandwich-type shockproof deformable infrared radiation (IR) sensors were fabricated using a rubbing-in technique. CNT and CNT-H2Pc (30:70 wt.%) composite layers were deposited on a polymeric rubber substrate as electrodes and active layers, respectively. Under the effect of IR irradiation (0 to 3700 W/m2), the resistance and the impedance of the surface-type sensors decreased up to 1.49 and 1.36 times, respectively. In the same conditions, the resistance and the impedance of the sandwich-type sensors decreased up to 1.46 and 1.35 times, respectively. The temperature coefficients of resistance (TCR) of the surface- and sandwich-type sensors are 1.2 and 1.1, respectively. The novel ratio of the H2Pc-CNT composite ingredients and comparably high value of the TCR make the devices attractive for bolometric applications meant to measure the intensity of infrared radiation. Moreover, given their easy fabrication and low-cost materials, the fabricated devices have great potential for commercialization.

Funder

Institutional Fund Project

Publisher

MDPI AG

Subject

Polymers and Plastics,General Chemistry

Reference39 articles.

1. Vogt, H. (2010). Bolometer Having an Organic Semiconductor Layer Arrangement. (Office EP 1994384 B1), European Patent.

2. IR Sensor based on low bandgap organic photodiode with up-converting phosphor;Kettle;IEEE Sens. J.,2015

3. Emerging design and characterization guidelines for polymer-based infrared photodetectors;Wu;Acc. Chem. Res.,2018

4. Mueller, M., Cheng, J., Pisano, A., and Cauley, T.H. (2009). Infrared Sensor Systems and Devices. (7,547,886), U.S. Patent.

5. Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption;Siegmund;Nat. Commun.,2017

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