Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Author:

Zhang Yi12,Jiang Yang12ORCID,Tang Chuying2,Deng Chenkai2,Du Fangzhou2ORCID,He Jiaqi2,Hu Qiaoyu2,Wang Qing2,Yu Hongyu2,Wang Zhongrui1ORCID

Affiliation:

1. Faculty of Engineering, The University of Hong Kong, Hong Kong 999077, China

2. School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China

Abstract

The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.

Funder

National Natural Science Foundation of China

Hong Kong Research Grants Council—Early Career Scheme

Application Research Project of Gallium Nitride Chips in 5G in Nanshan District, Shenzhen

Shenzhen Futian District High Reliability Gallium Nitride Power Device and Industrial Application Research Project

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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