Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns

Abstract

Lift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simple lift-off process for dense nanostructured pattern in CSAR62. The pattern is defined in a single layer CSAR62 resist mask for gold nanostructures on silicon. The process offers a slimmed down pathway for pattern definition of dense nanostructures with varied feature size and an up to 10 nm thick gold layer. The resulting patterns from this process have been successfully used in metal assisted chemical etching applications.