A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples
Author:
Piotrowska Anna KatarzynaORCID,
Łaszcz AdamORCID,
Zaborowski MichałORCID,
Broda ArturORCID,
Szmigiel Dariusz
Abstract
This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radiation. The principle of operation of the manufactured detectors is based on the Seebeck effect (the temperature difference between hot and cold junctions induced voltage appearance). The devices were composed of several thermocouples arranged in a linear array. The nano- and microscale thermocouples (the hot junctions) were fabricated using a typical Si-compatible MEMS process enhanced with focused ion beam (FIB) milling. The performance of the hot junctions was tested, focusing on their sensitivity to IR radiation covering the near-infrared (NIR) radiation (λ = 976 nm). The output voltage was measured as a function of the detector position in the XY plane. The measurement results allowed for reconstructing the Gaussian-like intensity distribution of the incident light beam.
Funder
Polish National Science Center
Research Agenda of the investment project co-financed from the Regional Operational Programme for Mazowieckie Voivodeship
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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