Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET-Reference-Cited by-同舟云学术

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Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET

Published:2014 Issue:1/2/3/4 Volume:11 Page:15
ISSN:1475-7435
Container-title:International Journal of Nanotechnology
language:en
Short-container-title:IJNT

Author:

Yang Chia Ming,Wang Jer Chyi,Chiang Tzu Wen,Lin Yi Ting,Juan Teng Wei,Chen Tsung g,Shih Ming Yang,Lue Cheng En,Lai Chao Sung

Publisher

Inderscience Publishers

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Cost, Point-of-Care Potassium Ion Sensing Electrode in EGFET Configuration for Ultra-High Sensitivity;IEEE Access;2024

2. Effect of Microwave Annealing on the Sensing Characteristics of HfO2 Thin Film for High Sensitive pH-EGFET Sensor;Micromachines;2023-09-28

3. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling;Electrochemical Science Advances;2021-10-03

4. Fluorographene sensing membrane in a light-addressable potentiometric sensor;Ceramics International;2019-05

5. Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing;Sensors;2019-03-02

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