A study of the electrical characteristics of nanoscale Si/strained SiGe pMOSFET
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Published:2009
Issue:10/11
Volume:6
Page:882
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ISSN:1475-7435
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Container-title:International Journal of Nanotechnology
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language:en
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Short-container-title:IJNT
Author:
Fathipour Morteza,Abbaszadeh Behrooz
Publisher
Inderscience Publishers
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering