Optimisation of extrinsic base doping of a SiGe heterojunction bipolar transistor integrated in a BiCMOS 55 nm technology for high frequency performances
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Published:2023
Issue:11/12
Volume:20
Page:1017-1026
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ISSN:1475-7435
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Container-title:International Journal of Nanotechnology
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language:en
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Short-container-title:IJNT
Author:
Lachkhab C.G.,Lakhdara M.,Boulgheb A.,Latreche S.
Publisher
Inderscience Publishers