Effect of dose loss of phosphorus on capacitance-voltage characteristics of n-type poly-Si junctionless thin-film transistors
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Published:2017
Issue:12
Volume:14
Page:1066
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ISSN:1475-7435
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Container-title:International Journal of Nanotechnology
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language:en
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Short-container-title:IJNT
Author:
Tsai Jung Ruey,Wen Ting Ting,Lin Horng Chih
Publisher
Inderscience Publishers
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering