Characteristics of gate-all-around polycrystalline silicon channel SONOS flash memory
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Published:2014
Issue:1/2/3/4
Volume:11
Page:116
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ISSN:1475-7435
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Container-title:International Journal of Nanotechnology
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language:en
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Short-container-title:IJNT
Author:
Seo Joo Yun,Lee Sang Ho,Park Se Hwan,Kim Wandong,Kim Do Bin,Park Byung Gook
Publisher
Inderscience Publishers
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering