Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors-Reference-Cited by-同舟云学术

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Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Published:2014 Issue:1/2/3/4 Volume:11 Page:62
ISSN:1475-7435
Container-title:International Journal of Nanotechnology
language:en
Short-container-title:IJNT

Author:

Wang Mu Chun,Wang Shea Jue,Huang Heng Sheng,Chen Shuang Yuan,Peng Min Ru,Ji Liang Ru,Lu Ming Feng,Liao Wen Shiang,Liu Chuan Hsi

Publisher

Inderscience Publishers

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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