Simulation of material and processing effects on photoresist line-edge roughness-Reference-Cited by-同舟云学术

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Simulation of material and processing effects on photoresist line-edge roughness

Published:2006 Issue:3/4 Volume:2 Page:134
ISSN:1742-7185
Container-title:International Journal of Computational Science and Engineering
language:en
Short-container-title:IJCSE

Author:

Patsis G.P.,Nijkerk M.D.,Leunissen L.H.A.,Gogolides E.

Publisher

Inderscience Publishers

Subject

Computational Theory and Mathematics,Computational Mathematics,Hardware and Architecture,Modeling and Simulation,Software

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography;ACS Materials Au;2024-03-27

2. Organometallic and coordinative photoresist materials for EUV lithography and related photolytic mechanisms;Coordination Chemistry Reviews;2023-10

3. Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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