C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness
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Published:2022-11-30
Issue:6
Volume:22
Page:678-685
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ISSN:2671-7255
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Container-title:Journal of Electromagnetic Engineering and Science
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language:en
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Short-container-title:J. Electromagn. Eng. Sci
Author:
Sung Ha-Wuk,Han Seong-Hee,Kim Seong-Il,Ahn Ho-Kyun,Lim Jong-Won,Kim Dong-Wook
Abstract
In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the transistor and series resistor-capacitor (RC) feedback between the gate and the drain of the transistor, we obtained stable amplifier operation and a compromised impedance trace for both input impedance matching and noise matching while suppressing performance degradation of the maximum available gain and minimum noise figure. The developed low-noise amplifier MMIC, which implements simple matching circuits by using biasing elements as matching elements, had a linear gain of more than 21.4 dB and a noise figure of less than 1.91 dB in the wide bandwidth of 4.3–7.4 GHz. Under the single-tone power test, the low-noise amplifier MMIC had an output P1dB of 14.3–20.1 dBm, and the two-tone intermodulation distortion measurement exhibited an input third-order intercept point (IIP3) of 2.2–5.6 dBm in the same frequency range as the above.
Funder
National Research Council of Science and Technology
Ministry of Science and ICT
Publisher
Korean Institute of Electromagnetic Engineering and Science
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Radiation