Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor-Reference-Cited by-同舟云学术

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Sensitivity Enhancement of a Vertical-Type CMOS Hall Device for a Magnetic Sensor

Published:2018-01-31 Issue:1 Volume:18 Page:35-40
ISSN:2234-8409
Container-title:Journal of Electromagnetic Engineering and Science
language:en
Short-container-title:J Electromagn Eng Sci

Author:

Oh Sein,Jang Byung-Jun,Chae Hyungil

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Development of a Hall Semiconductor for a Smart Car and a Device

Publisher

Korean Institute of Electromagnetic Engineering and Science

Subject

General Medicine

Link

http://jees.kr/upload/pdf/jees-2018-18-1-35.pdf

Reference12 articles.

1. A Fully Integrated Hall Sensor Microsystem for Contactless Current Measurement

2. A 256 Pixel Magnetoresistive Biosensor Microarray in 0.18 µm CMOS

3. Optimal geometry of CMOS voltage-mode and current-mode vertical magnetic hall sensors

4. High resolution, low offset Vertical Hall device in low-voltage CMOS technology

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Economical Three-Dimension (3-D) Hall Device on 0.15-μm Bipolar-CMOS-DMOS (BCD) Platform;IEEE Sensors Journal;2024-04-01

2. A Low-Dimensional Layout of Magnetic Units as Nano-Systems of Combinatorial Logic: Numerical Simulations;Materials;2021-05-31

3. Finite Length Effects on Switching Mechanisms in Chains of Magnetic Particles;Magnetochemistry;2020-10-01

4. Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC;Sensors;2020-09-16

5. A Novel Experimental Approach to the Applicability of High-Sensitivity Giant Magneto-Impedance Sensors in Magnetic Field Communication;IEEE Access;2020

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