The fully-integrated CMOS RF power amplifier using the semilumped transformer-Reference-Cited by-同舟云学术

The fully-integrated CMOS RF power amplifier using the semilumped transformer

Published:2008-11 Issue:11 Volume:50 Page:2857-2860
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Jin Boshi,Han Kichon,Choi Jinsung,Kang Daehyun,Kim Bumman

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. WiMAX power amplifiers and front-end modules: A primer in design considerations;Poulin;Microwave J,2007

2. Z. Niklas, J. Ted, and H. Stefan, A 27.3-dBm DECT power amplifier for 2.5V supply in 0.13-μm CMOS, In: Proceedings of the Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 2008.

3. A 1.9-GHZ CMOS Power amplifier using an interdigitated transmission line transformer;Park;Microwave Opt Technol Lett,2007

4. Fully integrated CMOS power amplifier design using the distributed active-transformer architecture;Aoki;IEEE J Solid State Circuits,2002

5. An optimized design of distributed active transformer;Kim;IEEE Trans Microwave Theory Tech,2005

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