Raman scattering of TixV1‐xO2 thin films on (110) rutile TiO2 in the low and high temperature phase adjacent to the metal–insulator transition

Author:

Kuhl Florian1,Lu Hao1ORCID,Becker Martin1,Chen Limei1,Zheng Yonghui2,Polity Angelika1,Zhang Zaoli2,He Yunbin3,Klar Peter J.1

Affiliation:

1. Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa) Justus Liebig University Giessen Giessen Germany

2. Erich Schmid Institute of Materials Science Austrian Academy of Sciences Leoben Austria

3. Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, School of Materials Science Engineering Hubei University Wuhan People's Republic of China

Abstract

AbstractVanadium dioxide (VO2) undergoes a reversible first‐order metal‐to‐insulator transition (MIT) from a high‐temperature metallic phase to a low‐temperature insulating phase at a critical temperature Tc of 68°C. The MIT is accompanied by a structural phase transition. In addition to the metallic high‐temperature rutile phase, several insulating phases may be involved depending on doping, interfacial stress, or external stimuli. Unambiguously identifying the crystal phases involved in the phase transition is of key interest from the point of view of application as well as fundamental science. We study the impact of Ti doping of VO2 thin films on (110) rutile TiO2 substrates. We conduct a careful analysis of structural properties by combining results of x‐ray diffraction, Raman spectroscopy, and transmission electron microscopy. The transition temperature Tc of the deposited thin films decreases with increasing Ti‐content. All our thin film samples undergo a structural phase transition from the monoclinic M1‐phase to the rutile R‐phase with increasing temperature without passing the intermediate monoclinic M2‐phase. A careful analysis of polarization and angle‐dependent Raman data reveals that, above Tc, the unit cell of the high‐temperature rutile TixV1‐xO2 phase is aligned with that of the rutile TiO2 substrate whereas, below Tc, 180°‐domains of the M1‐phase of TixV1‐xO2 are observed. The structural relationship between TiO2 substrate and the high respective low‐temperature phase of the TixV1‐xO2 determined by Raman spectroscopy is in excellent agreement with TEM results on these samples. Raman spectroscopy is a powerful tool for studying structural changes of VO2‐based samples in the vicinity of MIT.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Program for Science and Technology Innovation Team in Colleges of Hubei Province

China Scholarship Council

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3