P‐18: Student Poster: Low Voltage Oxide Transistor with High Dielectric Tantalum Oxide Gate Insulator by Thermal Oxidation of Tantalum
Author:
Affiliation:
1. School of Electronics & Display Engineering Hoseo University Asan Chungnam 31499 Republic of Korea
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15693
Reference5 articles.
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
2. High dielectric constant oxides;Robertson J;Applied Physics EDP Sciences,2004
3. High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 gate Dielectric;Chiu C. J.;IEEE Electron Device Letters
4. Signature of growth deposition technique on the properties of PECVD and thermal SiO2
5. Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering
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