Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high-speed photodetector-Reference-Cited by-同舟云学术

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Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high-speed photodetector

Published:2015-06-15 Issue:2 Volume:29 Page:333-342
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Debbar Nacer¹

Affiliation:

1. Electrical Engineering Department, College of Engineering; King Saud University; PO Box 800 Riyadh 11421 Saudi Arabia

Funder

College of Engineering Research Center, King Saud University

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2079/fullpdf

Reference29 articles.

1. Transient response of lateral photodetectors;Böttcher;Appl Phys Lett,1993

2. Transient response of photodetectors;Dunn;J Appl Phys,1996

3. A TCAD methodology for high speed photodetectors;Jacob;Solid-State Electron,2005

4. Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors;Gallo;Appl Phys Lett,2011

5. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications;Soole;IEEE J Quantum Electron,1991

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