Gate Dielectrics by Plasma Enhanced Chemical Vapor Deposition (PECVD)-Reference-Cited by-同舟云学术

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Gate Dielectrics by Plasma Enhanced Chemical Vapor Deposition (PECVD)

Published:2011-04-12 Issue: Volume: Page:101-145
ISSN:
Container-title:Organic Thin Film Transistor Integration
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Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527634446.ch4/fullpdf

Reference71 articles.

1. High-mobility polymer gate dielectric pentacene thin film transistors;Klauk;J. Appl. Phys.,2002

2. All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layers;Peng;Appl. Phys. Lett.,1990

3. High performance organic thin film transistors;Kelly;Mater. Res. Soc. Symp. Proc.,2003

4. A study of the threshold voltage in pentacene organic field-effect transistors;Schroeder;Appl. Phys. Lett.,2003

5. A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects;Park;Appl. Phys. Lett.,2004

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