Long-Wavelength GaSb Disk Lasers-Reference-Cited by-同舟云学术

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Long-Wavelength GaSb Disk Lasers

Published:2010-07-16 Issue: Volume: Page:143-186
ISSN:
Container-title:Semiconductor Disk Lasers
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Author:

Rösener Benno,Rattunde Marcel,Hopkins John-Mark,Burns David,Wagner Joachim

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Reference89 articles.

1. Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 µm: application to water and carbon dioxide;Garnache;Chem. Phys. Lett.,2005

2. Band parameters for III-V compound semiconductors and their alloys;Vurgaftman;J. Appl. Phys.,2001

3. Band gap and lattice constant of GaxIn1−xAsySb1−y;Shim;J. Appl. Phys.,2000

4. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm;Cerutti;Electron. Lett.,2003

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power;Applied Physics Letters;2012-10

2. Semiconductor disk laser at 2.05 μm wavelength with <100 kHz linewidth at 1 W output power;Applied Physics Letters;2012-01-16

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