Doping of ZnO
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527623945.ch4
Reference167 articles.
1. Intrinsic limitations to the doping of wide-gap semiconductors
2. Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation
3. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
4. Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” inn-Type III-V Semiconductors
5. Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, electronic and optical properties of Cu-doped ZnO: experimental and theoretical investigation;Philosophical Magazine;2016-05-06
2. Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability;The Journal of Physical Chemistry C;2012-11-06
3. Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA;Journal of Applied Physics;2011-09-15
4. Nitrogen and argon doped zinc oxide;Journal of Physics: Condensed Matter;2010-08-02
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