On the application of hole‐selective MoO x as full‐area rear contact for industrial scale p‐type c‐Si solar cells-Reference-Cited by-同舟云学术

On the application of hole‐selective MoO x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Published:2020-11-12 Issue:3 Volume:29 Page:281-293
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Nasser Hisham¹^ORCID,Es Fırat¹²,Zolfaghari Borra Mona¹³^ORCID,Semiz Emel¹⁴^ORCID,Kökbudak Gamze¹³,Orhan Efe¹,Turan Raşit¹³^ORCID

Affiliation:

1. The Center for Solar Energy Research and Applications (GÜNAM) Middle East Technical University (METU) Ankara 06800 Turkey

2. Kalyon Güneş Teknolojileri Üretim A.Ş. Başkent OSB, Malıköy Ankara Turkey

3. Micro and Nanotechnology Graduate Program of Natural and Applied Sciences Middle East Technical University (METU) Ankara 06800 Turkey

4. Science and Technology Policy Studies (METU‐TEKPOL) Middle East Technical University (METU) Ankara 06800 Turkey

Funder

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3363

Reference66 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

3. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

4. Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells

5. Electrical response of electron selective atomic layer deposited TiO2−xheterocontacts on crystalline silicon substrates

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