37.1: <i>Invited Paper:</i> Nanosheet High Mobility SnO <sub>2</sub> ‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit-Reference-Cited by-同舟云学术

37.1: Invited Paper: Nanosheet High Mobility SnO ₂ ‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

Published:2022-10 Issue:S1 Volume:53 Page:393-395
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Chin Albert¹,Yen Te Jui¹,Gritsenko Vladimir²³⁴

Affiliation:

1. Inst. Electronics Engineering National Yang Ming Chiao Tung University Hsinchu 300 Taiwan

2. Rzhanov Inst. Semiconductor Physics, Siberian Branch Russian Academy of Sciences Novosibirsk Russia

3. Novosibirsk State University Pirogova Street, 2 Novosobirsk 630090 Russia

4. Novosibirsk State Technical University K. Marx Ave., 20 Novosibirsk 630073 Russia

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15959

Reference21 articles.

1. 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-? dielectric on 1P6M-0.18μm-CMOS;Yu DS;Int. Electron Devices Meeting (IEDM) Tech. Dig. San Francisco: IEEE,2004

2. Extremely high mobility ultra-thin metal-oxide with ns2 np2 configuration;Shih CW;Int. Electron Devices Meeting (IEDM) Tech. Dig. Washington: IEEE,2015

3. Technologies toward three-dimensional brain-mimicking IC architecture;Chin A;IEEE Electron Devices Tech. & Manufacturing Conf. (EDTM) Tech. Dig. Singapore: IEEE,2019

4. High mobility metal-oxide devices for display SoP and 3D brain-mimicking IC;Chin A;Int. Display Workshop (IDW) Tech. Dig. Sapporo: IDW,2019

5. High mobility oxide complementary TFTs for system-on-display and three-dimensional brain-mimicking IC;Chin A;Proceedings of the International Conference on Display Technology (ICDT) Wuhan,2020