9-4: Simple Gate Driver Circuit with Inserted Stage for In-Cell Touch TFT-LCD Applications
Author:
Affiliation:
1. Department of Electrical Engineering; National Cheng Kung University; Tainan 701-01 Taiwan, R. O. C.
2. AU Optronics; Hsinchu Science Park Taiwan, R. O. C.
Funder
Ministry of Science and Technology
Publisher
Wiley
Reference8 articles.
1. Low-power a-Si gate driver circuit with threshold-voltage-shift recovery and synchronously controlled pull-down scheme;Lin;IEEE Trans. Electron Devices,2015
2. Integrated a-Si:H gate driver with low-level holding TFTs biased under bipolar pulses;Hu;Devices,2015
3. A novel depletion-mode a-IGZO TFT shift register with a node-shared structure;Kim;IEEE Electron Device Lett.,2012
4. 30 μm-pitch oxide TFT-based gate driver design for small-size, high-resolution, and narrow-bezel displays;Geng;IEEE Electron Device Lett.,2015
5. Newly developed 5.5 inch WQHD display with hybrid in-cell capacitive touch technology,” in;Ito;Proc. Int. Display Workshops,2015
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 15‐3: Hydrogenated Amorphous Silicon Gate Driver on Array with Time‐Division Driving Method for In‐Cell Touch Liquid‐Crystal Display;SID Symposium Digest of Technical Papers;2021-05
2. Highly Reliable a-Si:H TFT Gate Driver With Precharging Structure for In-Cell Touch AMLCD Applications;IEEE Transactions on Electron Devices;2019-04
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