Machine Learning‐Inspired Molecular Design, Divergent Syntheses, and X‐Ray Analyses of Dithienobenzothiazole‐Based Semiconductors Controlled by S⋅⋅⋅N and S⋅⋅⋅S Interactions

Abstract

AbstractInspired by the previous machine‐learning study that the number of hydrogen‐bonding acceptor (NHBA) is important index for the hole mobility of organic semiconductors, seven dithienobenzothiazole (DBT) derivatives 1 a–g (NHBA=5) were designed and synthesized by one‐step functionalization from a common precursor. X‐ray single‐crystal structural analyses confirmed that the molecular arrangements of 1b (the diethyl and ethylthienyl derivative) and 1c (the di(n‐propyl) and n‐propylthienyl derivative) in the crystal are classified into brickwork structures with multidirectional intermolecular charge‐transfer integrals, as a result of incorporation of multiple hydrogen‐bond acceptors. The solution‐processed top‐gate bottom‐contact devices of 1b and 1c had hole mobilities of 0.16 and 0.029 cm2 V−1s−1, respectively.