On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions-Reference-Cited by-同舟云学术

On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions

Published:2024-07-11 Issue:42 Volume:30 Page:
ISSN:0947-6539
Container-title:Chemistry – A European Journal
language:en
Short-container-title:Chemistry A European J

Author:

Felici Roberto¹^ORCID,Baroni Tommaso²,Carlà Francesco³^ORCID,Cioffi Nicola⁴⁵^ORCID,Di Benedetto Francesco⁶,Fontanesi Claudio⁷⁸^ORCID,Giaccherini Andrea⁹^ORCID,Giurlani Walter¹⁰⁸^ORCID,Gonidec Mathieu¹¹^ORCID,Lavacchi Alessandro¹²^ORCID,Berretti Enrico¹²^ORCID,Marcantelli Patrick¹⁰^ORCID,Montegrossi Giordano¹³^ORCID,Bonechi Marco¹⁰^ORCID,Picca Rosaria A.⁴⁵^ORCID,Poggini Lorenzo¹²^ORCID,Russo Francesca¹⁴^ORCID,Sportelli Maria C.⁴⁵^ORCID,Torsi Luisa⁴^ORCID,Innocenti Massimo⁵¹⁰⁸¹²^ORCID

Affiliation:

1. CNR-SPIN Tor Vergata site Rome 00133 Italy

2. Department of Earth Sciences University of Florence Florence 50121 Italy

3. Diamond Light Source Ltd Harwell Science and Innovation Campus Didcot OX11 0DE UK

4. Department of Chemistry University of Bari “Aldo Moro” Bari 70126 Italy

5. Center for Colloid and Surface Science (CSGI) Sesto Fiorentino 50019 Italy

6. Department of Physics and Earth Sciences University of Ferrara Ferrara 44122 Italy

7. Department of Engineering “Enzo Ferrari” University of Modena and Reggio Emilia Modena 41125 Italy

8. National Interuniversity Consortium of Materials Science and Technology (INSTM) Florence 50121 Italy

9. Department of Industrial Engineering University of Florence Florence 50139 Italy

10. Department of Chemistry “Ugo Schiff” University of Florence Sesto Fiorentino 50019 Italy

11. ICMCB Université Bordeaux and CNRS UMR 5026 Pessac 33600 France

12. Institute of Chemistry of Organometallic Compounds (ICCOM) – National Research Council (CNR) Sesto Fiorentino 50019 Italy

13. Institute of Geosciences and Georesources: Florence site (CNR-IGG) National Research Council Florence 50121 Italy

14. Department of Industrial Engineering University of Trento Via Sommarive 9 Trento 38123 Italy

Abstract

AbstractOur society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra‐high vacuum equipment. Here we report on the possibility of growing a p–n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E‐ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu2S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X‐Ray Diffraction (SXRD) and resulted in the fabrication of a thin double‐layer structure with a high degree of crystallographic order and a well‐defined interface. The high‐performance electrical characteristics of the device were analysed ex‐situ and show the characteristic feature of a diode.

Publisher

Wiley

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