Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOxstack and a low work function metal-Reference-Cited by-同舟云学术

Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOxstack and a low work function metal

Published:2018-05-28 Issue:10 Volume:26 Page:835-845
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Cho Jinyoun¹²^ORCID,Melskens Jimmy³,Debucquoy Maarten²,Recamán Payo Maria²,Jambaldinni Shruti²,Bearda Twan²,Gordon Ivan²,Szlufcik Jozef²,Kessels W.M.M.³,Poortmans Jef¹²⁴⁵

Affiliation:

1. ESAT Department; K.U. Leuven; Leuven 3001 Belgium

2. imec; Kapeldreef 75 Leuven 3001 Belgium

3. Department of Applied Physics; Eindhoven University of Technology; P.O. Box 513 5600 MB Eindhoven The Netherlands

4. University Hasselt; Martelarenlaan 42 Hasselt 3500 Belgium

5. EnergyVille; Thor Park 8310 Genk B-3600 Belgium

Funder

Institution of Mechanical Engineers

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.3023/fullpdf

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2. Progress on large area n-type silicon solar cells with front laser doping and a rear emitter;Urueña;Progress in Photovoltaics: Research and Applications,2016

3. Ye F Deng W Guo W Liu R Chen D Chen Y Yang Y Yuan N Ding J Feng Z Altermatt PP Verlinden PJ 22.13% Efficient industrial p-type mono PERC solar cell 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 2016 3360 3365 https://doi.org/10.1109/PVSC.2016.7750289

4. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency;Adachi;Appl Phys Lett,2015

5. McIntosh KR Altermatt PP Ratcliff TJ Fong KC Black LE Baker-Finch SC Abbott MD An examination of three common assumptions used to simulate recombination in heavily doped silicon 2013 1672 1679 https://doi.org/128thEUPVSEC201/28thEUPVSEC2013-2CV.4.9

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