Epitaxial growth and luminescence of CdSxSe1−x graded gap single crystal layers-Reference-Cited by-同舟云学术

Epitaxial growth and luminescence of CdSxSe1−x graded gap single crystal layers

Published:1972-11-16 Issue:1 Volume:14 Page:147-151
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Rüfer H.,Bille J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. The Preparation of Graded-Band-Gap Single Crystals of II–VI Compounds

2. Growth and Electrical Properties of Zinc‐Cadmium Sulfide Graded‐Band‐Gap Crystals

3. , , , , and , Proc. Internat. Conf. Phys. and Chem. of Semicond. Heterojunctions and Layer Structures, budapest 1970, Vol. 1, Akadèmiai Kiadò, Budapest 1971 (p. 221).

4. Transport of photocarriers in CdxHg1−xTe graded-gap structures

5. Continuously Tunable Laser Emission by CdSXSe1−XGraded Band Gap Crystals

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