The effect of removal of gallium acceptors in ion bombarded silicon-Reference-Cited by-同舟云学术

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The effect of removal of gallium acceptors in ion bombarded silicon

Published:1975-03-16 Issue:1 Volume:28 Page:321-325
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Igras E.,Krylow J.,Rosiński W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

2. Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms

3. Modern Diffraction and Imaging Techniques in Material Science, North-Holland Publ. Co., 1970 (p. 655).

4. On Electron Mirror Microscopic Observations of the Details of p-n Junction Regions in Si

5. and , III. Symp. Reliability in Electronics, Budapest 1973 (p. 135).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mirror Electron Microscopy;Advances in Imaging and Electron Physics;1995

2. Ion Implantation;Semiconducting Devices;1976

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