Threshold switching as a generation-recombination induced non-equilibrium phase transition (II)-Reference-Cited by-同舟云学术

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Threshold switching as a generation-recombination induced non-equilibrium phase transition (II)

Published:1981-05-16 Issue:1 Volume:65 Page:353-364
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Robbins D. J.,Landsberg P. T.,Schöll E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. The mechanism of threshold switching in amorphous alloys

2. Threshold switching in chalcogenide‐glass thin films

3. Threshold switching as a generation-recombination induced non-equilibrium phase transition

4. Stability and dissipation: non-equilibrium phase transition in semiconductors

5. Semiconductor models for first and second order non-equilibrium phase transitions

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