Hot Wall Epitaxy Technique on IV-VI Heterostructures Thermodynamical Study of Gas Transport in Thin Film Growth. Physical Characterization-Reference-Cited by-同舟云学术

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Hot Wall Epitaxy Technique on IV-VI Heterostructures Thermodynamical Study of Gas Transport in Thin Film Growth. Physical Characterization

Published:1992-10-16 Issue:2 Volume:133 Page:411-419
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Liautard B.,Muller M.,Dal Corso S.,Brun G.,Tedenac J. C.,Obadi A.,Fau C.,Charar S.,Gisbert F.,Averous M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Narrow Gap Semiconductors. Physics and Applications, Proc. Intern. Summer School, Nimes (France) 1979; Ed. by ;

2. Narrow-gap semiconductor detectors and lasers

3. Pb1-xSnxTe epitaxial layers prepared by the hot-wall technique

4. Growth and characterization of dilute magnetic PbTe/Pb1−xMnxTe superlattices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-organization of nanostructures in semiconductor heteroepitaxy;Physics Reports;2002-08

2. Pattern formation in PbTe multilayer films;Surface Science;2000-05

3. Optical properties of Pb1−xSnxSe thin layers grown by HWE;International Journal of Infrared and Millimeter Waves;1996-02

4. Growth studies and physical characterizations of Pb-Se-Te epilayers grown by H.W.E.;Le Journal de Physique IV;1993-08

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