Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves-Reference-Cited by-同舟云学术

Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves

Published:1989-10-16 Issue:2 Volume:115 Page:437-444
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Fabbri R.,Servidori M.,Zani A.,Cembali F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Radiation Effects in Semiconductors, Ed. and , Gordon and Breach Ltd., New York 1971 (p. 367).

2. Ion implantation in semiconductors—Part II: Damage production and annealing

3. On silicon amorphization during different mass ion implantation

4. and , Ion Implantation in Semiconductors, Edward Arnold, London 1976.

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