Comments of the Ev + 0.45 eV Quenched-in Level in Silicon-Reference-Cited by-同舟云学术

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Comments of the Ev + 0.45 eV Quenched-in Level in Silicon

Published:1982-07-16 Issue:1 Volume:72 Page:K33-K36
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Ioannou D. E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Quenched‐In Defects in p‐Type Silicon

2. Quenched-in Levels in p-Type Silicon

3. Defects in Quenched Silicon

4. Thermally induced defects in n-type and p-type silicon

5. EPR of a thermally induced defect in silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Iron and its complexes in silicon;Applied Physics A: Materials Science & Processing;1999-07-01

2. On the origin of rapid thermal process induced recombination centers in silicon;Journal of Applied Physics;1989-10-15

3. Bulk traps in ultrathin SIMOX MOSFET's by current DLTS;IEEE Electron Device Letters;1988-10

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