The Ordering Phenomenon in Highly Doped III-V Semiconductor Materials-Reference-Cited by-同舟云学术

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The Ordering Phenomenon in Highly Doped III-V Semiconductor Materials

Published:1990-08-16 Issue:2 Volume:120 Page:K121-K123
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Semikolenova N. A.,Bogdanova V. A.,Semikolenov A. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. , , and , Dep. CCRI Elektronika, Moscow 1987, No. P45474.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective electron mass in heavily doped GaAs in the ordering of impurity complexes;Semiconductors;2002-04

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