Space-charge recombination current in a diffused p–n junction-Reference-Cited by-同舟云学术

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Space-charge recombination current in a diffused p–n junction

Published:1980-06-16 Issue:2 Volume:59 Page:473-476
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

van de Wiele F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Carrier-recombination statistics in a 2-level trapping system

2. Space-charge recombination in a forward-biased diffused p-n junction

3. Generation-recombination characteristic behavior of silicon diodes

4. A theoretical and experimental study of recombination in silicon p−n junctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modified Boltzmann boundary conditions in junction theory;Solid-State Electronics;1997-11

2. Analysis and capacitive measurement of the built-in-field parameter in highly doped emitters;IEEE Transactions on Electron Devices;1982-10

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