Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETs-Reference-Cited by-同舟云学术

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Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETs

Published:1993-03-16 Issue:1 Volume:136 Page:K71-K73
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Lee M. B.,Lee J. I.,Kang K. N.,Yoon K. S.,Lim K. Y.,Lim H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Effects of carrier-velocity saturation on the characteristics of short channel MOSFETs with lightly doped drains

2. , , and , Proc. VLSI Symp., 1986 (p. 67).

3. Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side

4. Second substrate current peak and its relationship to gate-voltage dependent series resistance in submicrometrenMOS LDD

5. Design tradeoffs between surface and buried-channel FET's

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unified substrate current model for MOSFETs;Solid-State Electronics;1997-01

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