Refractive index changes of ion-implanted quartz-Reference-Cited by-同舟云学术

Refractive index changes of ion-implanted quartz

Published:1983-04-16 Issue:2 Volume:76 Page:K171-K174
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Beez H.,Fasold D.,Karge H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Radiation Effects of Bombardment of Quartz and Vitreous Silica by 7.5-kev to 59-kev Positive Ions

2. Extrusion of quartz on ion bombardment: Further evidence for radiation-induced stress relaxation of the silica network

3. , and , Proc. Internat. Conf. IBMMM, Budapest 1978;

4. Radiation defects and optical properties of ion implanted silicon dioxide

5. Compaction of ion‐implanted fused silica

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1. Oxygen-activated epitaxial recrystallization of Li-implantedα−SiO2;Physical Review B;2000-02-01

2. Solid phase epitaxial regrowth of ion beam-amorphized α-quartz;Applied Physics Letters;1998-09-07

3. Ion-beam damage to quartz crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-02

4. Ion-beam mixing at the Fe/SiO2interface: A conversion-electron Mössbauer spectroscopy and x-ray-diffraction study;Physical Review B;1989-07-01

5. Hydrogen doping of silica by ion beam enhanced hydration;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01