Phonon–defect interaction in dislocation-free GaAs-Reference-Cited by-同舟云学术

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Phonon–defect interaction in dislocation-free GaAs

Published:1977-06-16 Issue:2 Volume:41 Page:561-567
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Vuillermoz P. L.,Jouglar J.,Laugier A.,Winteler H. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Influence of Clusters on the Thermal Conductivity of GaAs

2. Thermal conductivity of Cr‐doped GaAs at low temperature

3. Influence de la non stoechiometrie sur les interactions phonons-dislocations dans GaAs:Te

4. Thesis No. 4072 ETH Zürich, 1968.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of local chemistry and structure on thermal transport in doped GaAs;Physical Review Materials;2019-09-06

2. Thermal conductivity of a GaAs single crystal grown in microgravity;Low Temperature Physics;2002-06

3. Phonon scattering by Cr ions in GaAs;Journal of Physics C: Solid State Physics;1982-03-10

4. Role du soufre dans le recuit de GaAs en atmosphere controlee;Solid State Communications;1981-10

5. On point defects and radiation damage of dislocation-free GaAs;Physica Status Solidi (a);1980-06-16

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