A New Luminescence Band Related to Radiation Defects in Ion-Implanted Zinc Sulphide-Reference-Cited by-同舟云学术

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A New Luminescence Band Related to Radiation Defects in Ion-Implanted Zinc Sulphide

Published:1983-10-16 Issue:2 Volume:79 Page:K181-K185
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Quang V. X.,Anh T. Kim,Liem N. Q.,Maass K.,Selle B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Messungen der Eindringtiefen von Ionen in LiF-, ZnS- und CsJ-Aufdampfschichten

2. Ion implantation doping of zinc sulphide thin films

3. Ion implantation of zinc sulphide

4. Ion implantation and luminescence

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants;Journal of Physics D: Applied Physics;1999-01-01

2. Structural and electrical investigation of implantation damage annealing in CdTe;Semiconductor Science and Technology;1996-06-01

3. Identification of the IB Emission Band in Al-Doped ZnS Crystals;Acta Physica Polonica A;1996-05

4. Study of Blue Photoluminescent Band in ZnS Crystals;Acta Physica Polonica A;1994-12

5. Ion implantation in II–VI compound semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03

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