The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels-Reference-Cited by-同舟云学术

The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

Published:1988-09-16 Issue:1 Volume:109 Page:211-216
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Aronov D. A.,Kabulov R.,Yuabov Yu. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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3. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

4. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

5. A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor

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3. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness;physica status solidi (a);1990-04-16