The electrical and optical properties of n-type HgIn2Te4-Reference-Cited by-同舟云学术

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The electrical and optical properties of n-type HgIn2Te4

Published:1988-02-16 Issue:2 Volume:105 Page:563-566
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Eshraghi S. A.,Kianian S.,Ostrom B.,Stafsudd O. M.,Gentile A. L.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Lattice dynamics of the ordered vacancy compound HgIn2Square Operator Te4

2. and , New Semiconductor Materials, Consultants Bureau, New York 1965.

3. and , Proc. Fifth Internat. Conf. Phys. Semicond., Prague 1960, Academic Press, New York 1961 (p. 1026).

4. The electronic characteristics of n‐type CdIn2Te4

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2. High-temperature thermoelectric properties of Hg-doped CuInTe2;Journal of Applied Physics;2015-09-28

3. Nonlinearity, optoelectronic properties, and their correlations for some mixed ternary defect chalcopyrites;Quantum Electronics;2010-12-09

4. Mercury indium selenides and tellurides (HgIn2Se4, HgIn2Te4, Hg3In2Te6, Hg5In2Te8) physical properties;Landolt-Börnstein - Group III Condensed Matter

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