“Up-hill” diffusion of Zinc in the III–V semiconductors-Reference-Cited by-同舟云学术

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“Up-hill” diffusion of Zinc in the III–V semiconductors

Published:1977-02 Issue:2 Volume:39 Page:509-515
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Tuck B.,Zahari M. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Introduction to Diffusion in Semiconductors, Peter Peregrinus, Stevenage 1974.

2. Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion Experiments

3. and , Proc. Internat. Symp. on GaAs, 1976, Inst. of Phys., London, to be published.

4. Diffusion and Solubility of Zinc in Gallium Phosphide Single Crystals

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The structure and properties of metal-semiconductor interfaces;Surface Science Reports;1982-11

2. Effect of vacancy reduction on diffusion in semiconductors;Journal of Physics D: Applied Physics;1982-09-14

3. Diffusion of tin in n-type GaAs;Journal of Physics D: Applied Physics;1978-12-21

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