Characterization of DX centers in GaAlAs grown by liquid-phase epitaxy-Reference-Cited by-同舟云学术

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Characterization of DX centers in GaAlAs grown by liquid-phase epitaxy

Published:1988-01-16 Issue:1 Volume:105 Page:K51-K55
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Žďánský K.,Binh Le Thanh

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

2. Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures

3. Growth Condition Independence Observed for DX Center in Si-doped AlGaAs Grown by Molecular Beam Epitaxy

4. and , Heterostructure Lasers, Part B, Academic Press, New York 1978 (p. 127).

5. Spectroscopy of the deep levels in tin-doped Ga-Al-As

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs;Czechoslovak Journal of Physics;1999

2. Kinetics of DX centres with illumination the justification of the band structure model;Physica Status Solidi (a);1989-11-16

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