Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films-Reference-Cited by-同舟云学术

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Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

Published:1983-01-16 Issue:1 Volume:75 Page:K63-K68
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Azimov S. A.,Aronov D. A.,Rubinov V. M.,Tuichiev M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. , and , Vakuumnoe nanesenie plenok v kvazi-zamknutom obeme, Izd. Sovetskoe Radio, Moscow 1975.

2. , , and , Tezisy dokl. na konf. po fizike soednenii AIIIBV, Novosibirsk 1981 (p. 318);

3. Deposited at Central Sci. Res. Inst. Elektronika, No. R-3176 (1981),

4. and , Vtorichno-emissionnye metody issledovaniya tverdogo tela, Izd. Nauka, Moscow 1977.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons;Physica Status Solidi (a);1984-10-16

2. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films;Physica Status Solidi (a);1983-07-16

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